Sayeef Salahuddin receives James C. McGroddy Prize for New Materials

Sayeef Salahuddin, the TSMC Distinguished Professor of Electrical Engineering and Computer Sciences, was awarded the 2026 James C. McGroddy Prize for New Materials “for the discovery of ferroelectricity in ultra thin hafnium based oxides and their implementation in microelectronic devices.”

The award, given annually by American Physical Society (APS), recognizes and encourages outstanding achievement in the science and application of new materials. This includes the discovery of new classes of materials, the observation of novel phenomena in known materials leading to both fundamentally new applications and scientific insights, and also includes theoretical and experimental work contributing significantly to the understanding of such phenomena.

The prize was established in 1997 and is endowed by IBM and the APS Division of Materials Physics.

Salahuddin is a co-director of the Berkeley Device Modeling Center and Berkeley Center for Negative Capacitance Transistors. He served on the editorial board of IEEE Electron Devices Letters (2013-16) and was the chair the IEEE Electron Devices Society committee on Nanotechnology (2014-16). Salahuddin is a fellow of the IEEE and the APS.