New nonvolatile memory cells shrink circuits and speed searches
The work of Prof. Sayeef Salahuddin and grad student Ava Tan is featured in an article in the IEEE Spectrum titled “New Nonvolatile Memories Shrink Circuits That Search Fast.” Salahuddin, a ferroelectric device pioneer, has been conducting work on a new kind of content-addressable memory cell that could speed searches and enable in-memory computing. The new nonvolatile memory, which is smaller and potentially much more dense than other experimental designs, relies on ferroelectric field-effect transistors (FeFETs), which store data as an electric polarization within the transistor.