EECS-affiliated team develops new, ultrafast method for electrically controlling magnetism in certain metals

A UC Berkeley/UC Riverside research group that includes Prof. Jeffrey Bokor, Prof. Sayeef Salahuddin, postdoc Charles-Henri Lambert, postdoctoral fellow Jon Gorchon, and EE graduate student Akshay Pattabi have developed a new, ultrafast method for electrically controlling magnetism in certain metals, a breakthrough that could lead to greatly increased performance and more energy-efficient computer memory and processing technologies.  Their findings are published in both Science Advances (Vol. 3, No. 49, Nov. 3, 2017) under the title Ultrafast magnetization reversal by picosecond electrical pulses and Applied Physics Letters (Vol. III, No. 4, July 24, 2017) under the title Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers.  “The development of a non-volatile memory that is as fast as charge-based random-access memories could dramatically improve performance and energy efficiency of computing devices,” says Bokor. “That motivated us to look for new ways to control magnetism in materials at much higher speeds than in today’s MRAM.”